The authors would like to acknowledge Dr. Lee J. Richter for initiating this collaborative effort. L. C. T. and B. H. H. acknowledge funding from the National Research Council/National Institute of Standards and Technology postdoctoral fellowship program. J. E. A. acknowledges the Office of Naval Research for support of this research. Supporting Information is available online from Wiley InterScience or from the author.
Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors†
Article first published online: 20 OCT 2008
Copyright © 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 20, Issue 23, pages 4513–4516, December 2, 2008
How to Cite
Teague, L. C., Hamadani, B. H., Jurchescu, O. D., Subramanian, S., Anthony, J. E., Jackson, T. N., Richter, C. A., Gundlach, D. J. and Kushmerick, J. G. (2008), Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors. Adv. Mater., 20: 4513–4516. doi: 10.1002/adma.200801780
- Issue published online: 4 DEC 2008
- Article first published online: 20 OCT 2008
- Manuscript Received: 25 JUN 2008
- National Research Council/National Institute of Standards
- charge transport;
- field-effect transistors;
- scanning kelvin probe microscopy;
- solution processing
Scanning Kelvin probe microscopy (SKPM) of functioning solution processed thin film transistors is used to correlate film microstructure with device performance. As the channel length increases in these spun–cast devices, significant changes occur in the film microstructure within the device channel. These changes are observed with SKPM, and show a strong structure–function relationship.