Self-Supported Ion-Conductive Membrane-Based Transistors

Authors

  • Nikolai J. Kaihovirta,

    1. Center for Functional Materials Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    2. Department of Physics Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    3. Graduate School of Materials Research Turku Universities Porthansgatan 3, 20500 Åbo (Finland)
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  • Carl-Johan Wikman,

    1. Center for Functional Materials Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    2. Laboratory of Polymer Technology Åbo Akademi University Biskopsgatan 8, 20500, Åbo (Finland)
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  • Tapio Mäkelä,

    1. Center for Functional Materials Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    2. Department of Physics Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
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  • Carl-Eric Wilén,

    1. Center for Functional Materials Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    2. Laboratory of Polymer Technology Åbo Akademi University Biskopsgatan 8, 20500, Åbo (Finland)
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  • Ronald Österbacka

    Corresponding author
    1. Center for Functional Materials Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    2. Department of Physics Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland)
    • Center for Functional Materials Åbo Akademi University Porthansgatan 3, 20500 Åbo (Finland).
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Abstract

original image

A new type of low-voltage organic transistor is manufactured using a thick ion-conducting membrane as gate insulator. High current output at 1 V of operation is achieved. The versatile properties of the novel insulator are shown by driving an electrochromic display pixel and a transistor on the same membran.e

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