Utilizing Highly Crystalline Pyroelectric Material as Functional Gate Dielectric in Organic Thin-Film Transistors

Authors

  • Nguyen Thanh Tien,

    1. School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University Suwon, Kyunggi-do 440-746 (Korea)
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  • Young Gug Seol,

    1. School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University Suwon, Kyunggi-do 440-746 (Korea)
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  • Le Huynh Anh Dao,

    1. School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University Suwon, Kyunggi-do 440-746 (Korea)
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  • Hwa Young Noh,

    1. School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University Suwon, Kyunggi-do 440-746 (Korea)
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  • Nae-Eung Lee

    Corresponding author
    1. School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University Suwon, Kyunggi-do 440-746 (Korea)
    • School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University Suwon, Kyunggi-do 440-746 (Korea).
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Abstract

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Highly crystalline P(VDF-TrFE) materials have a large remnant polarization that causes the ID–VD curves to have no current saturation in the region where they normally would. This high crystallinity also results in a positive pyroelectricity, which is different from the conventional low response and nonlinear negative pyroelectricity.

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