Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy

Authors

  • Vivek Kalihari,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota 151 Amundson Hall, 421 Washington Avenue SE Minneapolis, MN 55455 (USA)
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  • E. B. Tadmor,

    1. Department of Aerospace Engineering and Mechanics, University of Minnesota 107 Akerman Hall, 110 Union St SE Minneapolis, MN 55455 (USA)
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  • Greg Haugstad,

    1. Characterization Facility, University of Minnesota Shepherd Labs, 100 Union St SE Minneapolis, MN 55455 (USA)
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  • C. Daniel Frisbie

    Corresponding author
    1. Department of Chemical Engineering and Materials Science, University of Minnesota 151 Amundson Hall, 421 Washington Avenue SE Minneapolis, MN 55455 (USA)
    • Department of Chemical Engineering and Materials Science, University of Minnesota 151 Amundson Hall, 421 Washington Avenue SE Minneapolis, MN 55455 (USA).
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  • The authors thank Y. Liang and Y. Xia for useful discussion and some technical support. This work was supported primarily by the University of Minnesota Materials Research Science and Engineering Center, funded by the NSF (DMR-0212302), and also partly through DMR-0706011. Parts of this work were carried out in the Institute of Technology Characterization Facility, University of Minnesota, which receives partial support from NSF through the NNIN program. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

original image

A scanning probe technique, termed transverse shear microscopy, produces striking images of grain size, shape, and crystallographic orientation in ultrathin layers of polycrystalline organic semiconductors. The key feature of this novel technique is its ability to generate Grain Orientation Maps that facilitate quantitative analysis of grain alignment and the angular distribution of GBs.

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