A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films


  • We gratefully acknowledge the support of the US Department of Energy (DOE) through the LANL/LDRD Program, DOE EE-RE Solid State Lighting Program, and NSF/DMR Ceramic Program (NSF 0709831).


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Epitaxial metal nitride films are prepared using a general chemical solution approach. A polymer-assisted deposition to prepare epitaxial cubic TiN, metastable AlN, and ternary nitride Ti1−xAlxN films is demonstrated. The structural, optical and electrical properties of the films are investigated, and may be of interest for many technological applications.