We gratefully acknowledge the support of the US Department of Energy (DOE) through the LANL/LDRD Program, DOE EE-RE Solid State Lighting Program, and NSF/DMR Ceramic Program (NSF 0709831).
Communication
A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films†
Article first published online: 30 OCT 2008
DOI: 10.1002/adma.200801959
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Luo, H., Lin, Y., Wang, H., Lee, J. H., Suvorova, N. A., Mueller, A. H., Burrell, A. K., McCleskey, T. M., Bauer, E., Usov, I. O., Hawley, M. E., Holesinger, T. G. and Jia, Q. (2009), A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films. Adv. Mater., 21: 193–197. doi: 10.1002/adma.200801959
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Publication History
- Issue published online: 2 JAN 2009
- Article first published online: 30 OCT 2008
- Manuscript Received: 10 JUL 2008
- Abstract
- References
- Cited By
Keywords:
- thin films;
- synthesis;
- nitrides;
- polymer-assisted deposition;
- chemical solution deposition

Epitaxial metal nitride films are prepared using a general chemical solution approach. A polymer-assisted deposition to prepare epitaxial cubic TiN, metastable AlN, and ternary nitride Ti1−xAlxN films is demonstrated. The structural, optical and electrical properties of the films are investigated, and may be of interest for many technological applications.

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