Financial support from the Max Planck Society through the program ENERCHEM, European Commission Project NAIMO (NMP4-CT-2004-500355), and the German Science Foundation (Korean–German IRTG) are gratefully acknowledged. Supporting Information is available online from Wiley InterScience or from the author.
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Communication
Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors†
Article first published online: 12 NOV 2008
DOI: 10.1002/adma.200802031
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Gao, P., Beckmann, D., Tsao, H. N., Feng, X., Enkelmann, V., Baumgarten, M., Pisula, W. and Müllen, K. (2009), Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors. Adv. Mater., 21: 213–216. doi: 10.1002/adma.200802031
- †
Publication History
- Issue published online: 2 JAN 2009
- Article first published online: 12 NOV 2008
- Manuscript Revised: 22 SEP 2008
- Manuscript Received: 17 JUL 2008
Funded by
- Max Planck Society. Grant Number: NMP4-CT-2004-500355
- German Science Foundation (Korean–German IRTG)
Keywords:
- charge-carrier mobility;
- oligoacenes;
- organic field-effect transistor;
- semiconductors;
- solution processing
The facile synthesis of a new five-ring-fused pentacene analog with four symmetrically fused thiophene ring units (Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene, Cn-DTBDT) is presented. After aligning this material from solution, thin films for organic field-effect transistors were obtained, resulting in excellent hole mobilities of up to 1.7 cm2V−1s−1, and on/off ratio of 107.