Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors


  • Financial support from the Max Planck Society through the program ENERCHEM, European Commission Project NAIMO (NMP4-CT-2004-500355), and the German Science Foundation (Korean–German IRTG) are gratefully acknowledged. Supporting Information is available online from Wiley InterScience or from the author.


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The facile synthesis of a new five-ring-fused pentacene analog with four symmetrically fused thiophene ring units (Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene, Cn-DTBDT) is presented. After aligning this material from solution, thin films for organic field-effect transistors were obtained, resulting in excellent hole mobilities of up to 1.7 cm2V−1s−1, and on/off ratio of 107.