Communication

Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors†

  1. Peng Gao1,
  2. Dirk Beckmann1,
  3. Hoi Nok Tsao1,
  4. Xinliang Feng1,
  5. Volker Enkelmann1,
  6. Martin Baumgarten1,
  7. Wojciech Pisula1,2,
  8. Klaus Müllen1,*

Article first published online: 12 NOV 2008

DOI: 10.1002/adma.200802031

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 2, pages 213–216, January 12, 2009

Additional Information

How to Cite

Gao, P., Beckmann, D., Tsao, H. N., Feng, X., Enkelmann, V., Baumgarten, M., Pisula, W. and Müllen, K. (2009), Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors. Adv. Mater., 21: 213–216. doi: 10.1002/adma.200802031

Author Information

  1. 1

    Max Planck Institute for Polymer Research Ackermannweg 10, 55128 Mainz (Germany)

  2. 2

    Present address: Evonik Degussa GmbH Process Technology & Engineering, Process Technology New Processes Rodenbacher Chaussee 4 63457 Hanau-Wolfgang Germany

*Max Planck Institute for Polymer Research Ackermannweg 10, 55128 Mainz (Germany).

  1. †

    Financial support from the Max Planck Society through the program ENERCHEM, European Commission Project NAIMO (NMP4-CT-2004-500355), and the German Science Foundation (Korean–German IRTG) are gratefully acknowledged. Supporting Information is available online from Wiley InterScience or from the author.

Publication History

  1. Issue published online: 2 JAN 2009
  2. Article first published online: 12 NOV 2008
  3. Manuscript Revised: 22 SEP 2008
  4. Manuscript Received: 17 JUL 2008

Funded by

  • Max Planck Society. Grant Number: NMP4-CT-2004-500355
  • German Science Foundation (Korean–German IRTG)

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