Communication

The Influence of Morphology on High-Performance Polymer Field-Effect Transistors

  1. Hoi Nok Tsao1,
  2. Don Cho1,
  3. Jens Wenzel Andreasen2,
  4. Ali Rouhanipour1,
  5. Dag W. Breiby3,
  6. Wojciech Pisula1,4,*,
  7. Klaus Müllen1,*

Article first published online: 2 DEC 2008

DOI: 10.1002/adma.200802032

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 2, pages 209–212, January 12, 2009

Additional Information

How to Cite

Tsao, H. N., Cho, D., Andreasen, J. W., Rouhanipour, A., Breiby, D. W., Pisula, W. and Müllen, K. (2009), The Influence of Morphology on High-Performance Polymer Field-Effect Transistors. Adv. Mater., 21: 209–212. doi: 10.1002/adma.200802032

Author Information

  1. 1

    Max Planck Institute for Polymer Research Ackermannweg 10, 55128 Mainz (Germany)

  2. 2

    Risø National Laboratory for Sustainable Energy Technical University of Denmark Frederiksborgvej 399, DK-4000 Roskilde (Denmark)

  3. 3

    Department of Physics Norwegian University of Science and Technology Høgskoleringen 5, N-7491 Trondheim (Norway)

  4. 4

    Present Address: Evonik Degussa GmbH Process Technology & Engineering Process Technology New Processes Rodenbacher Chaussee 4, Hanau-Wolfgang 63457 (Germany)

*Max Planck Institute for Polymer Research Ackermannweg 10, 55128 Mainz (Germany).

Publication History

  1. Issue published online: 2 JAN 2009
  2. Article first published online: 2 DEC 2008
  3. Manuscript Revised: 19 SEP 2008
  4. Manuscript Received: 17 JUL 2008

Funded by

  • EU project NAIMO. Grant Number: NMP4-CT-2004-500355

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Keywords:

  • alignment;
  • charge-carrier mobility;
  • organic field-effect transistor;
  • polymeric materials;
  • polymer morphology
Thumbnail image of graphical abstract

The influence of molecular packing on the performance of polymer organic field-effect transistors is illustrated in this work. Both close π-stacking distance and long-range order are important for achieving high mobilities. By aligning the polymers from solution, long-range order is induced, yielding hole mobilities of up to µsat = 1.4 cm2 V−1 s−1 and current on/off ratios Ion/Ioff of 105.

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