Advanced Materials

Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3

Authors

  • Dhanvir Singh Rana,

    Corresponding author
    1. Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
    2. Present address: Indian Institute of Science Education and Research, Bhopal, India
    • Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
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  • Iwao Kawayama,

    1. Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
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  • Krushna Mavani,

    1. Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
    2. Present address: Institute for Integrated Cell-Material Sciences, Kyoto University, Japan
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  • Kouhei Takahashi,

    1. Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
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  • Hironaru Murakami,

    1. Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
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  • Masayoshi Tonouchi

    Corresponding author
    1. Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
    • Institute of Laser Engineering, Osaka University 2-6 Yamadaoka, Suita 565-0871, Osaka (Japan)
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Abstract

The crystallographic anisotropy in electromagnetic terahertz radiation from multiferroic BiFeO3 (100), (110), and (111) films suggests the ultrafast depolarization of ferroelectric order as a new mechanism of terahertz emission. This implies that the spontaneous polarization in ferroelectric materials can be manipulated in time scale of picoseconds, thus paving the way to ultrafast data-storage devices based on nonvolatile ferroelectric memories.

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