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Keywords:

  • arrays;
  • bottom imprint method;
  • epitaxial growth;
  • nanowires;
  • silicon
Thumbnail image of graphical abstract

A novel bottom imprint method to fabricate high-quality Si [100] nanowire arrays is demonstrated. This new approach combines the functions of a high-ordering AAO template as a stamp and template simultaneously. By the protective polymer layer in the hot imprint, the vertical 40 nm Si nanowire arrays grow epitaxially on the Si substrate with a narrow size distribution