Communication

Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

  1. Xiao-Mei Zhang1,2,
  2. Ming-Yen Lu2,3,
  3. Yue Zhang1,*,
  4. Lih-J. Chen3,
  5. Zhong Lin Wang2,*

Article first published online: 25 MAR 2009

DOI: 10.1002/adma.200802686

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 27, pages 2767–2770, July 20, 2009

Additional Information

How to Cite

Zhang, X.-M., Lu, M.-Y., Zhang, Y., Chen, L.-J. and Wang, Z. L. (2009), Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film. Adv. Mater., 21: 2767–2770. doi: 10.1002/adma.200802686

Author Information

  1. 1

    Department of Materials Physics and Chemistry State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 (PR China)

  2. 2

    School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia 30332-0245, (USA)

  3. 3

    Department of Materials Science and Engineering National Tsing Hua University Hsinchu, Taiwan 30043, (ROC)

*Department of Materials Physics and Chemistry State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 (PR China).

Publication History

  1. Issue published online: 10 JUL 2009
  2. Article first published online: 25 MAR 2009
  3. Manuscript Revised: 23 JAN 2009
  4. Manuscript Received: 11 SEP 2008

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

Get PDF (458K)

Keywords:

  • light-emitting diodes;
  • nanowires;
  • zinc oxide
Thumbnail image of graphical abstract

Bright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV–blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation.

Get PDF (458K)