Advanced Materials

Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

Authors

  • Xiao-Mei Zhang,

    1. Department of Materials Physics and Chemistry State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 (PR China)
    2. School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia 30332-0245, (USA)
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  • Ming-Yen Lu,

    1. School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia 30332-0245, (USA)
    2. Department of Materials Science and Engineering National Tsing Hua University Hsinchu, Taiwan 30043, (ROC)
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  • Yue Zhang,

    Corresponding author
    1. Department of Materials Physics and Chemistry State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 (PR China)
    • Department of Materials Physics and Chemistry State Key Laboratory for Advanced Metals and Materials University of Science and Technology Beijing Beijing 100083 (PR China).
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  • Lih-J. Chen,

    1. Department of Materials Science and Engineering National Tsing Hua University Hsinchu, Taiwan 30043, (ROC)
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  • Zhong Lin Wang

    Corresponding author
    1. School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia 30332-0245, (USA)
    • School of Materials Science and Engineering Georgia Institute of Technology Atlanta, Georgia 30332-0245, (USA).
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Abstract

Bright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV–blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation.

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