Communication
Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods
Article first published online: 14 JAN 2009
DOI: 10.1002/adma.200802767
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Diedenhofen, S. L., Vecchi, G., Algra, R. E., Hartsuiker, A., Muskens, O. L., Immink, G., Bakkers, E. P. A. M., Vos, W. L. and Rivas, J. G. (2009), Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods. Adv. Mater., 21: 973–978. doi: 10.1002/adma.200802767
Publication History
- Issue published online: 23 FEB 2009
- Article first published online: 14 JAN 2009
- Manuscript Revised: 19 NOV 2008
- Manuscript Received: 17 SEP 2008
Funded by
- “Nederlandse organisatie voor Wetenschappelijk Onderzoek (NWO)”
- Abstract
- References
- Cited By
Keywords:
- Semiconductor;
- Nanorods;
- Thin films;
- GaP;
- Chemical vapor deposition

A broad-band and omnidirectional antireflection coating consisting of semiconductor nanowires is fabricated. The reflection is reduced due to a graded refractive index, which is achieved by a certain nanorod-length distribution of cylindrical and conically shaped rods. An increased transmission and, accordingly, a reduced reflection are demonstrated for the visible and near-infrared parts of the spectrum.

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