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Keywords:

  • Heterojunction diode;
  • Lasing;
  • Low threshold;
  • Zinc oxide
Thumbnail image of graphical abstract

Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n-ZnO layer from the p-GaN layer. The threshold of the lasing action is as low as 0.8 mA..