Advanced Materials

Ultralow-Threshold Laser Realized in Zinc Oxide

Authors

  • Hai Zhu,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
    2. Graduate School of the Chinese Academy of Sciences Beijing 100049 (P. R. China)
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  • Chong-Xin Shan,

    Corresponding author
    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
    • Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China).
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  • Bin Yao,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • Bing-Hui Li,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • Ji-Ying Zhang,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • Zheng-Zhong Zhang,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • Dong-Xu Zhao,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • De-Zhen Shen,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • Xi-Wu Fan,

    1. Lab of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 (P. R. China)
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  • You-Ming Lu,

    1. College of Materials Science and Engineering Shenzhen University Shenzhen 518060 (P. R. China)
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  • Zi-Kang Tang

    1. Department of Physics Hong Kong University of Science & Technology Clear Water Bay, Kowloon Hong Kong (P. R. China)
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Abstract

Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n-ZnO layer from the p-GaN layer. The threshold of the lasing action is as low as 0.8 mA..

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