The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films

Authors

  • An Quan Jiang,

    1. ASIC & System State Key Laboratory Department of Microelectronics Fudan University Shanghai, 200433 (P.R. China)
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  • Hyun Ju Lee,

    1. Department of Materials Science and Engineering Seoul National University Seoul, 151-744 (Korea)
    2. Inter-university Semiconductor Research Center Seoul National University Seoul, 151-744 (Korea)
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  • Gun Hwan Kim,

    1. Department of Materials Science and Engineering Seoul National University Seoul, 151-744 (Korea)
    2. Inter-university Semiconductor Research Center Seoul National University Seoul, 151-744 (Korea)
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  • Cheol Seong Hwang

    Corresponding author
    1. Department of Materials Science and Engineering Seoul National University Seoul, 151-744 (Korea)
    2. Inter-university Semiconductor Research Center Seoul National University Seoul, 151-744 (Korea)
    • Department of Materials Science and Engineering Seoul National University Seoul, 151-744 (Korea).
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Abstract

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Ferroelectric switching in ultrathin Al2O3/PZT bilayers is studied and used to modulate the applied electric field, allowing the development of novel applications of the combined dielectric tunnel switch/ferroelectric functional layer that can assist in the development of completely new types of electronic, electromechanical, and electrochemical devices.

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