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Carbon-Based Field-Effect Transistors for Nanoelectronics

Authors

  • Marko Burghard,

    Corresponding author
    1. Max-Planck-Insitut fuer Festkoerperforschung Heisenbergstrasse 1, 70569 Stuttgart (Germany)
    • Max-Planck-Insitut fuer Festkoerperforschung Heisenbergstrasse 1, 70569 Stuttgart (Germany).
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  • Hagen Klauk,

    1. Max-Planck-Insitut fuer Festkoerperforschung Heisenbergstrasse 1, 70569 Stuttgart (Germany)
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  • Klaus Kern

    1. Max-Planck-Insitut fuer Festkoerperforschung Heisenbergstrasse 1, 70569 Stuttgart (Germany)
    2. Institut de Physique de la Matière Condensée Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne (Switzerland)
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Abstract

In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their π-conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined.

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