Patterning of Solution-Processed Semiconducting Polymers in High-Mobility Thin-Film Transistors by Physical Delamination

Authors

  • Jui-Fen Chang,

    Corresponding author
    1. Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE (United Kingdom)
    • Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE (United Kingdom).
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  • Henning Sirringhaus

    Corresponding author
    1. Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE (United Kingdom)
    • Cavendish Laboratory, University of Cambridge Madingley Road, Cambridge CB3 0HE (United Kingdom).
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Abstract

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Patterning of high-mobility semiconducting polymer thin films is essential to prevent undesirable crosstalk in realization of integrated circuits. We present here two simple selective physical delamination methods that allow clean and high-resolution patterning of semiconducting polymers for thin-film transistors, leading to a significant reduction in OFF current while retaining the high field-effect mobilities of the unpatterned polymer films.

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