One Transistor–One Resistor Devices for Polymer Non-Volatile Memory Applications

Authors

  • Tae-Wook Kim,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Hyejung Choi,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Seung-Hwan Oh,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Gunuk Wang,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Dong-Yu Kim,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Hyunsang Hwang,

    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Takhee Lee

    Corresponding author
    1. Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
    • Heeger Center for Advanced Materials Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea).
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Abstract

original image

1T–1R hybrid-type devices consisting of a silicon transistor and a resistive polymer memory as nonvolatile memory cell elements are demonstrated. Our results show that the operation of the 1T–1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T–1R devices was maintained for more than 104 s.

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