Inside Front Cover: Chemical Control of Local Doping in Organic Thin-Film Transistors: From Depletion to Enhancement (Adv. Mater. 16/2008)



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The image background shows an elemental map of a cross-section through an organic thin-film transistor containing a chemically reactive interfacial layer, as determined by energy-filtered transmission electron microscopy. The layout of the device (shown in the foreground) allows the realization of a transistor whose threshold voltage can be shifted by up to 60 volts upon exposure to ammonia switching its mode of operation from depletion to enhancement, as reported by Egbert Zojer and co-workers on p. 3143.