Communication

Ultrahigh-Crystalline-Quality Silicon Pillars Formed by Millimeter-Wave Annealing of Amorphous Silicon on Glass

  1. Fude Liu1,*,
  2. Kim M. Jones1,
  3. Yueqin Xu1,
  4. William Nemeth1,
  5. John Lohr2,
  6. Jeff Neilson3,
  7. Manuel J. Romero1,
  8. Mowafak M. Al-Jassim1,
  9. David L. Young1

Article first published online: 28 MAY 2009

DOI: 10.1002/adma.200900157

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 29, pages 3002–3006, August 7, 2009

Additional Information

How to Cite

Liu, F., Jones, K. M., Xu, Y., Nemeth, W., Lohr, J., Neilson, J., Romero, M. J., Al-Jassim, M. M. and Young, D. L. (2009), Ultrahigh-Crystalline-Quality Silicon Pillars Formed by Millimeter-Wave Annealing of Amorphous Silicon on Glass. Advanced Materials, 21: 3002–3006. doi: 10.1002/adma.200900157

Author Information

  1. 1

    National Center for Photovoltaics National Renewable Energy Laboratory Golden, CO 80401 (USA)

  2. 2

    General Atomics 3550 General Atomics Court San Diego, CA 92121 (USA)

  3. 3

    Lexam Research 10 Black Fox Way Redwood City, CA 94062 (USA)

*National Center for Photovoltaics National Renewable Energy Laboratory Golden, CO 80401 (USA).

Publication History

  1. Issue published online: 31 JUL 2009
  2. Article first published online: 28 MAY 2009
  3. Manuscript Revised: 21 FEB 2009
  4. Manuscript Received: 15 JAN 2009

Funded by

  • U.S. Department of Energy. Grant Number: DE-AC36-99GO10337

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Keywords:

  • Silicon Pillars;
  • Annealing;
  • Amorphous silicon;
  • Ultrahigh-crystalline materials

Graphical Abstract

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Silicon pillars are formed by millisecond-long, single-pulse annealing of 110 GHz millimeter-wave radiation incident upon intrinsic amorphous silicon (a-Si) thin films deposited on glass by hot-wire chemical vapor deposition. The image was taken at a sample tilt angle of 52° for a better 3D view.

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