Organic Single-Crystal Schottky Gate Transistors

Authors

  • Toshihiko Kaji,

    1. Institute for Materials Research Tohoku University Katahira, Aoba-ku, Sendai 980-8577 (Japan)
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  • Taishi Takenobu,

    Corresponding author
    1. Institute for Materials Research Tohoku University Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. Kavli Institute of Nanoscience Delft University of Technology Lorentzweg 1, 2628CJ Delft (The Netherlands)
    3. PRESTO, Japan Science and Technology Agency 4-1-8 Honcho Kawaguchi 330-0012 (Japan)
    • Institute for Materials Research Tohoku University Katahira, Aoba-ku, Sendai 980-8577 (Japan).
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  • Alberto F. Morpurgo,

    1. Kavli Institute of Nanoscience Delft University of Technology Lorentzweg 1, 2628CJ Delft (The Netherlands)
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  • Yoshihiro Iwasa

    1. Institute for Materials Research Tohoku University Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. CREST, Japan Science and Technology Agency 4-1-8 Honcho Kawaguchi 330-0012 (Japan)
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Abstract

original image

Schottky contacts and Schottky gate transistors on organic single crystals are successfully fabricated, and enable the complete understanding of the operating mechanism as well as a full description of the energy-band diagram. This represents a considerable step forward in the understanding of organic semiconductors, and offers a viable route for organic-device design.

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