Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Authors

  • Rainer Waser,

    Corresponding author
    1. Jülich-Aachen Research Alliance Section Fundamentals of Future Information Technology (JARA-FIT) 52425 Jülich (Germany)
    2. Institut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
    3. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University 52056 Aachen (Germany)
    • Jülich-Aachen Research Alliance Section Fundamentals of Future Information Technology (JARA-FIT) 52425 Jülich (Germany).

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  • Regina Dittmann,

    1. Jülich-Aachen Research Alliance Section Fundamentals of Future Information Technology (JARA-FIT) 52425 Jülich (Germany)
    2. Institut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
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  • Georgi Staikov,

    1. Jülich-Aachen Research Alliance Section Fundamentals of Future Information Technology (JARA-FIT) 52425 Jülich (Germany)
    2. Institut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
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  • Kristof Szot

    1. Jülich-Aachen Research Alliance Section Fundamentals of Future Information Technology (JARA-FIT) 52425 Jülich (Germany)
    2. Institut für Festkörperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
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Abstract

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This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..

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