High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

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Abstract

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Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

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