Communication

High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

  1. Kwang H. Lee1,
  2. Gyubaek Lee1,
  3. Kimoon Lee1,
  4. Min Suk Oh1,
  5. Seongil Im1,*,
  6. Sung-Min Yoon2

Article first published online: 24 JUN 2009

DOI: 10.1002/adma.200900398

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 42, pages 4287–4291, November 13, 2009

Additional Information

How to Cite

Lee, K. H., Lee, G., Lee, K., Oh, M. S., Im, S. and Yoon, S.-M. (2009), High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels. Adv. Mater., 21: 4287–4291. doi: 10.1002/adma.200900398

Author Information

  1. 1

    Institute of Physics and Applied Physics Yonsei University 262 Seongsanno, Seodaemun-gu Seoul 120-749 (Korea)

  2. 2

    IT Convergence and Component Lab. Electronics and Telecommunications Research Institute 138 Gajeongro, Yuseong-gu Daejeon, 305-700 (Korea)

*Institute of Physics and Applied Physics Yonsei University 262 Seongsanno, Seodaemun-gu Seoul 120-749 (Korea).

Publication History

  1. Issue published online: 6 NOV 2009
  2. Article first published online: 24 JUN 2009
  3. Manuscript Revised: 10 APR 2009
  4. Manuscript Received: 4 FEB 2009

Funded by

  • KOSEF (NRL program:). Grant Number: 2009-8-0403
  • Brain Korea 21 Project
  • MKE (ETRI IT R&D program:). Grant Number: 2006-S079-02
  • 21st century Frontier R&D Program:. Grant Number: F0004022-2008-31

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Keywords:

  • ferroelectric polymer;
  • nonvolatile memory;
  • pentacene;
  • thin-film transistor;
  • ZnO
Thumbnail image of graphical abstract

Nonvolatile memory ferroelectric thin-film transistors (FeTFT) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO- and pentacene-FeTFTs.

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