Low-Temperature Solution-Processed Memory Transistors Based on Zinc Oxide Nanoparticles



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We report on thin!film transistors based on ZnO nanoparticles processed from solution and with a maximum temperature of 100 °C. Electron mobilities up to 2.5 cm2V−1s−1 are obtained, and top-gate TFTs show non-volatile memory properties with a large, stable hysteresis and a memory ratio of 105. Memory TFTs operate in ambient, have good shelf-life (>6 months), and useful endurance properties.