Communication

Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors

  1. Stephanie S. Lee1,
  2. Chang Su Kim1,
  3. Enrique D. Gomez1,
  4. Balaji Purushothaman4,
  5. Michael F. Toney2,
  6. Cheng Wang3,
  7. Alexander Hexemer3,
  8. John. E. Anthony4,
  9. Yueh-Lin Loo1,*

Article first published online: 2 JUN 2009

DOI: 10.1002/adma.200900705

Issue

Advanced Materials

Advanced Materials

Volume 21, Issue 35, pages 3605–3609, September 18, 2009

Additional Information

How to Cite

Lee, S. S., Kim, C. S., Gomez, E. D., Purushothaman, B., Toney, M. F., Wang, C., Hexemer, A., Anthony, J. E. and Loo, Y.-L. (2009), Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors. Advanced Materials, 21: 3605–3609. doi: 10.1002/adma.200900705

Author Information

  1. 1

    Department of Chemical Engineering, Princeton University Princeton, NJ 08544 (USA)

  2. 2

    Stanford Synchrotron Radiation Lightsource Menlo Park, CA 94025 (USA)

  3. 3

    Lawrence Berkeley National Laboratory Berkeley, CA 94720 (USA)

  4. 4

    Department of Chemistry, University of Kentucky Lexington, KY 40506 (USA)

*Department of Chemical Engineering, Princeton University Princeton, NJ 08544 (USA).

Publication History

  1. Issue published online: 15 SEP 2009
  2. Article first published online: 2 JUN 2009
  3. Manuscript Revised: 2 APR 2009
  4. Manuscript Received: 27 FEB 2009

Funded by

  • National Science Foundation MRSEC Program through the Princeton Center for Complex Materials. Grant Number: DMR-0819860

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Keywords:

  • Semiconductors;
  • Transistors;
  • Thin Films;
  • Organic Electronics;
  • Solution Processing

Graphical Abstract

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Three orders of magnitude is the range over which the grain size (see figure) can be tuned in solution-processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl anthradithiophene (FTES-ADT) is added in fractional amounts to seed crystallization of TES-ADT. Correlation between device mobility and grain size in the active layer is described by a composite mobility model that assumes charge-carrier traps are located at grain boundaries.

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