Advanced Materials

Majority Carrier Type Conversion with Floating Gates in Carbon Nanotube Transistors

Authors

  • Woo Jong Yu,

    1. Sungkyunkwan Advanced Institute of Nanotechnology, Department of Energy Science, BK21 Physics Division, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea)
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  • Bo Ram Kang,

    1. Sungkyunkwan Advanced Institute of Nanotechnology, Department of Energy Science, BK21 Physics Division, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea)
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  • Il Ha Lee,

    1. Sungkyunkwan Advanced Institute of Nanotechnology, Department of Energy Science, BK21 Physics Division, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea)
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  • Yo-Sep Min,

    1. Department of Chemical Engineering, Konkuk University Hwayang-dong, Gwangjin-gu, Seoul (Korea)
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  • Young Hee Lee

    Corresponding author
    1. Sungkyunkwan Advanced Institute of Nanotechnology, Department of Energy Science, BK21 Physics Division, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea)
    • Sungkyunkwan Advanced Institute of Nanotechnology, Department of Energy Science, BK21 Physics Division, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746 (Korea).
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Abstract

A charge trapping layer can serve not only for designing multilevel nonvolatile memory but also for type conversion from p- to n-type and vice versa of carbon nanotube (CNT) channels. Type conversion from p- to n-type and vice versa for CNT field effect transistors can be realized by changing the polarity of trapped charges (see figure).

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