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Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing

Authors

Errata

This article is corrected by:

  1. Errata: Correction: Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing Volume 22, Issue 45, 5081, Article first published online: 30 November 2010

Abstract

original image

C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide glass, the transistors display electron mobilities as high as 0.21 cm2 V−1 s−1 and a threshold voltage of 0.7 V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.

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