Communication
Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene
Article first published online: 15 AUG 2009
DOI: 10.1002/adma.200901285
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Panchakarla, L. S., Subrahmanyam, K. S., Saha, S. K., Govindaraj, A., Krishnamurthy, H. R., Waghmare, U. V. and Rao, C. N. R. (2009), Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene. Adv. Mater., 21: 4726–4730. doi: 10.1002/adma.200901285
Publication History
- Issue published online: 8 DEC 2009
- Article first published online: 15 AUG 2009
- Manuscript Received: 16 APR 2009
Funded by
- JNCASR
- Abstract
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- Cited By
Keywords:
- doping;
- grapheme;
- structure–property relationships

Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.

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