Advanced Materials

Real-Time Observation and Control of Pentacene Film Growth on an Artificially Structured Substrate

Authors

  • Yuki Tsuruma,

    1. Department of Complexity Science and Engineering The University of Tokyo 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561 (Japan)
    Search for more papers by this author
  • Abdullah Al-Mahboob,

    1. Institute for Materials Research Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    Search for more papers by this author
  • Susumu Ikeda,

    1. Department of Complexity Science and Engineering The University of Tokyo 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561 (Japan)
    Search for more papers by this author
  • Jerzy T. Sadowski,

    1. Institute for Materials Research Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. Center for Functional Nanomaterials Brookhaven National Laboratory Upton, NY 11973 (USA)
    Search for more papers by this author
  • Genki Yoshikawa,

    1. Institute for Materials Research Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. World Premier International Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba-shi, Ibaraki 305-0044 (Japan)
    Search for more papers by this author
  • Yasunori Fujikawa,

    1. Institute for Materials Research Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    Search for more papers by this author
  • Toshio Sakurai,

    1. Institute for Materials Research Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    Search for more papers by this author
  • Koichiro Saiki

    Corresponding author
    1. Department of Complexity Science and Engineering The University of Tokyo 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561 (Japan)
    • Department of Complexity Science and Engineering The University of Tokyo 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561 (Japan).
    Search for more papers by this author

Abstract

Suppression of nucleation around a gold electrode during pentacene growth on a SiO2 channel is found by photoemission electron microscopy. Mass flow is driven by the difference between the molecular orientations on SiO2 and gold. The poor connectivity at the channel/electrode boundary causes degradation in the performance of a field-effect transistor, which is found to be improved by self-assembled monolayer treatment on the electrode (see figure; thickness in monolayers (ML)).

original image

Ancillary