Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films

Authors

  • Keisuke Shibuya,

    Corresponding author
    1. Institut für Festköperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
    2. Present address: Cross-Correlated Materials Research Group (CMRG), Emergent Materials Department, Advanced Science Institute, RIKEN (Japan)
    • Institut für Festköperforschung, Forschungszentrum Jülich 52425 Jülich (Germany).
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  • Regina Dittmann,

    Corresponding author
    1. Institut für Festköperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
    • Institut für Festköperforschung, Forschungszentrum Jülich 52425 Jülich (Germany).
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  • Shaobo Mi,

    1. Institut für Festköperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
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  • Rainer Waser

    1. Institut für Festköperforschung, Forschungszentrum Jülich 52425 Jülich (Germany)
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Abstract

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The resistive switching properties of Sr2TiO4 thin films with specific defect distribution have been studied. Junctions of Sr2TiO4 thin films containing a high density of defects show well-pronounced resistive switching properties while those with well-ordered microstructure exhibited insignificant hysteresis windows. This work clearly demonstrates the crucial role of defects for the microscopic switching mechanisms in oxide thin films.

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