Communication

High-mobility Ambipolar Transistors and High-gain Inverters from a Donor–Acceptor Copolymer Semiconductor

  1. Felix Sunjoo Kim1,
  2. Xugang Guo2,
  3. Mark D. Watson2,*,
  4. Samson A. Jenekhe1,*

Article first published online: 11 AUG 2009

DOI: 10.1002/adma.200901819

Issue

Advanced Materials

Advanced Materials

Volume 22, Issue 4, pages 478–482, January 26, 2010

Additional Information

How to Cite

Kim, F. S., Guo, X., Watson, M. D. and Jenekhe, S. A. (2010), High-mobility Ambipolar Transistors and High-gain Inverters from a Donor–Acceptor Copolymer Semiconductor. Advanced Materials, 22: 478–482. doi: 10.1002/adma.200901819

Author Information

  1. 1

    Department of Chemical Engineering and Department of Chemistry University of Washington Seattle, WA 98195-1750 (USA)

  2. 2

    Department of Chemistry University of Kentucky Lexington, KY 40506-0055 (USA)

*Department of Chemistry University of Kentucky Lexington, KY 40506-0055 (USA).

Publication History

  1. Issue published online: 21 JAN 2010
  2. Article first published online: 11 AUG 2009
  3. Manuscript Received: 30 MAY 2009

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Keywords:

  • charge transport;
  • donor–acceptor systems;
  • field-effect transistors;
  • organic conductors;
  • transistor

Graphical Abstract

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High-performance ambipolar transistors and inverters are demonstrated using a new donor–acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm2 V−1 s−1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with gain of 30.

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