Advanced Materials

High-mobility Ambipolar Transistors and High-gain Inverters from a Donor–Acceptor Copolymer Semiconductor

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Abstract

High-performance ambipolar transistors and inverters are demonstrated using a new donor–acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm2 V−1 s−1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with gain of 30.

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