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Advanced Materials

Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated–Oxide Semiconductor Heterostructures

Authors

  • Masaki Nakano,

    1. Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
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  • Atsushi Tsukazaki,

    1. Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. PRESTO, Japan Science and Technology Agency 5 Sanban-cho, Chiyoda-ku, Tokyo 102-0075 (Japan)
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  • Akira Ohtomo,

    1. Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
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  • Kazunori Ueno,

    1. WPI Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
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  • Shunsuke Akasaka,

    1. Interdisciplinary Devices R&D Center, ROHM Co. Ltd. 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan)
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  • Hiroyuki Yuji,

    1. Interdisciplinary Devices R&D Center, ROHM Co. Ltd. 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan)
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  • Ken Nakahara,

    1. Interdisciplinary Devices R&D Center, ROHM Co. Ltd. 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 (Japan)
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  • Tomoteru Fukumura,

    1. Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. PRESTO, Japan Science and Technology Agency 5 Sanban-cho, Chiyoda-ku, Tokyo 102-0075 (Japan)
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  • Masashi Kawasaki

    Corresponding author
    1. Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    2. WPI Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
    3. CREST, Japan Science and Technology Agency 5 Sanban-cho, Chiyoda-ku, Tokyo 102-0075 (Japan)
    • Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan).
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Errata

This article is corrected by:

  1. Errata: Correction: Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures Volume 22, Issue 14, Article first published online: 12 April 2010
  2. Errata: Correction: Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures Volume 22, Issue 45, 5081, Article first published online: 30 November 2010

Abstract

A defect-free and electronically abrupt polymer/oxide interface can be achieved by spin-coating of PEDOT:PSS on ZnO-based heterostructures. The interface yielding Schottky contact leads to the successful modulation of quantum 2D transport in MgZnO/ZnO interfaces via the electric-field effect, which indicates that the polymer/oxide interface enables a high-mobility field-effect transistor.

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