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Advanced Materials

Pentacene Transistors Fabricated on Photocurable Polymer Gate Dielectrics: Tuning Surface Viscoelasticity and Device Response

Authors

  • Choongik Kim,

    1. Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, Illinois 60208-3113 (USA)
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  • Jordan R. Quinn,

    1. Polyera Corporation 8045 Lamon Avenue, Skokie, Illinois 60077 (USA)
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  • Antonio Facchetti,

    Corresponding author
    1. Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, Illinois 60208-3113 (USA)
    2. Polyera Corporation 8045 Lamon Avenue, Skokie, Illinois 60077 (USA)
    • Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, Illinois 60208-3113 (USA)
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  • Tobin J. Marks

    Corresponding author
    1. Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, Illinois 60208-3113 (USA)
    • Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, Illinois 60208-3113 (USA)
    Search for more papers by this author

Abstract

Pentacene-based thin-film transistors (TFTs) are fabricated, and characterized, on UV-curable polymer gate dielectrics with different photocrosslinking times (hence, different degrees of crosslinking). The results show that pentacene TFT measurements can be an informative probe of polymer film viscoelastic properties, as modified by crosslinking, and relatively mild, contactless polymer dielectric processing can dramatically enhance the OTFT performance.

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