Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
Version of Record online: 28 DEC 2009
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 22, Issue 12, pages 1346–1350, March 26, 2010
How to Cite
Jeong, S., Ha, Y.-G., Moon, J., Facchetti, A. and Marks, T. J. (2010), Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors. Adv. Mater., 22: 1346–1350. doi: 10.1002/adma.200902450
- Issue online: 23 MAR 2010
- Version of Record online: 28 DEC 2009
- Manuscript Revised: 17 OCT 2009
- Manuscript Received: 22 JUL 2009
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