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Advanced Materials

Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

Authors

  • Byungjin Cho,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Tae-Wook Kim,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
    2. Present Address: Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA
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  • Sunghoon Song,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Yongsung Ji,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Minseok Jo,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Hyunsang Hwang,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
    2. Department of Nanobio Materials and Electronics Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Gun-Young Jung,

    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
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  • Takhee Lee

    Corresponding author
    1. Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
    2. Department of Nanobio Materials and Electronics Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea)
    • Department of Materials Science and Engineering Gwangju Institute of Science and Technology 1 Oryong-Dong, Buk-Gu Gwangju 500-712 (Korea).
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Abstract

One diode–one resistor (1D–1R) hybrid-type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D–1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells.

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