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Advanced Materials

Structural Characterization of Multi-Quantum Wells in Electroabsorption-Modulated Lasers by using Synchrotron Radiation Micrometer-Beams

Authors

  • Lorenzo Mino,

    1. Department of Inorganic, Physical, Materials Chemistry NIS Center of Excellence and INSTM Unit, University of Turin Via P. Giuria 7, 10125 Turin (Italy)
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  • Diego Gianolio,

    1. Department of Inorganic, Physical, Materials Chemistry NIS Center of Excellence and INSTM Unit, University of Turin Via P. Giuria 7, 10125 Turin (Italy)
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  • Giovanni Agostini,

    1. Department of Inorganic, Physical, Materials Chemistry NIS Center of Excellence and INSTM Unit, University of Turin Via P. Giuria 7, 10125 Turin (Italy)
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  • Andrea Piovano,

    1. Department of Inorganic, Physical, Materials Chemistry NIS Center of Excellence and INSTM Unit, University of Turin Via P. Giuria 7, 10125 Turin (Italy)
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  • Marco Truccato,

    1. NIS Center of Excellence, Department of Experimental Physics, University of Turin Via P. Giuria 1, 10125, Turin (Italy)
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  • Angelo Agostino,

    1. NIS Center of Excellence, Department of General and Organic Chemistry University of Turin C.so Massimo D'Azeglio 48, 10125, Turin (Italy)
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  • Stefano Cagliero,

    1. NIS Center of Excellence, Department of General and Organic Chemistry University of Turin C.so Massimo D'Azeglio 48, 10125, Turin (Italy)
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  • Gema Martinez-Criado,

    1. ESRF 6 rue Jules Horowitz, BP220, 38043, Grenoble CEDEX (France)
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  • Simone Codato,

    1. Avago Technologies Italy S.r.l., Torino Technology Centre Via G. Schiaparelli 12, 10148 Turin (Italy)
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  • Carlo Lamberti

    Corresponding author
    1. Department of Inorganic, Physical, Materials Chemistry NIS Center of Excellence and INSTM Unit, University of Turin Via P. Giuria 7, 10125 Turin (Italy)
    • Department of Inorganic, Physical, Materials Chemistry NIS Center of Excellence and INSTM Unit, University of Turin Via P. Giuria 7, 10125 Turin (Italy).
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Abstract

Advanced optoelectronic devices require monolithic integration of different functions at chip level. This is the case of multi-quantum well (MQW) electro absorption modulated lasers (EMLs) realized by using the selective area growth (SAG) technique, and which can be employed in long-distance, high-frequency optical fiber communication applications. We demonstrate that a micrometer-resolved X-ray beam available at third-generation synchrotron radiation sources allows direct measurement of determinant structural parameters of MQW EML structures.

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