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Advanced Materials

Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

Authors

  • Xiao-Dong Zhuang,

    1. Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China)
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  • Yu Chen,

    Corresponding author
    1. Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China)
    • Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China).
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  • Gang Liu,

    1. Department of Chemical & Biomolecular Engineering National University of Singapore 10 Kent Ridge, 119260 (Singapore)
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  • Pei-Pei Li,

    1. Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China)
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  • Chun-Xiang Zhu,

    1. Department of Electrical & Computer Engineering National University of Singapore 10 Kent Ridge, 119260 (Singapore)
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  • En-Tang Kang,

    Corresponding author
    1. Department of Chemical & Biomolecular Engineering National University of Singapore 10 Kent Ridge, 119260 (Singapore)
    • Department of Chemical & Biomolecular Engineering National University of Singapore 10 Kent Ridge, 119260 (Singapore).
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  • Koon-Gee Noeh,

    1. Department of Chemical & Biomolecular Engineering National University of Singapore 10 Kent Ridge, 119260 (Singapore)
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  • Bin Zhang,

    1. Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China)
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  • Jin-Hui Zhu,

    1. Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China)
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  • Yong-Xi Li

    1. Key Laboratory for Advanced Materials Institute of Applied Chemistry East China University of Science and Technology 130 Meilong Road, Shanghai 200237 (P. R. China)
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Abstract

An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of −1.0 V and an ON/OFF-state current ratio of more than 103. Both ON and OFF state are stable under a constant voltage stress and survive up to 108 read cycles at a read voltage of −1.0 V.

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