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n-Type Organic Semiconductors in Organic Electronics

Authors

  • John E. Anthony,

    Corresponding author
    1. Department of Chemistry, University of Kentucky, Lexington, KY 40506 (USA)
    • Department of Chemistry, University of Kentucky, Lexington, KY 40506 (USA)
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  • Antonio Facchetti,

    1. Polyera Corporation, 8045 Lamon Avenue Skokie, IL 60077 (USA)
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  • Martin Heeney,

    Corresponding author
    1. Department of Chemistry, Imperial College London, South Kensington, London SW7 2AZ (UK)
    • Department of Chemistry, Imperial College London, South Kensington, London SW7 2AZ (UK)
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  • Seth R. Marder,

    Corresponding author
    1. School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (USA)
    • School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (USA)
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  • Xiaowei Zhan

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (P. R. China)
    • Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (P. R. China).
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Abstract

Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

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