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Learning Abilities Achieved by a Single Solid-State Atomic Switch

Authors

  • Tsuyoshi Hasegawa,

    Corresponding author
    1. WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan)
    • WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan).
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  • Takeo Ohno,

    1. WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan)
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  • Kazuya Terabe,

    1. WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan)
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  • Tohru Tsuruoka,

    1. WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan)
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  • Tomonobu Nakayama,

    1. WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan)
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  • James K. Gimzewski,

    1. Department of Chemistry and Biochemistry University of California, Los Angeles 607 Charles E. Young Drive East Los Angeles, CA 90095-1569 (USA)
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  • Masakazu Aono

    1. WPI Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, 305-0044 (Japan)
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Abstract

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Learning abilities are demonstrated using a single solid-state atomic switch, wherein the formation and dissolution of a metal filament are controlled depending on the history of prior switching events. The strength of the memorization level gradually increases when the number of input signals is increased. Once the filament forms a bridge, electrons flow in a ballistic mode and long-term memorization is achieved (see figure).

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