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Keywords:

  • Field-effect transistors;
  • Polymer field-effect transistors;
  • Ambipolar transport;
  • Inverters;
  • Polyselenophenes
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High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V−1 s−1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.