High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

Authors

  • Jun Liu,

    1. Department of Chemistry and the Materials Research Center Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA)
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  • D. Bruce Buchholz,

    1. Department of Materials Science and Engineering and the Materials Research Center Northwestern University, 2220 Campus Drive, Evanston, IL 60208 (USA)
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  • Robert P. H. Chang,

    Corresponding author
    1. Department of Materials Science and Engineering and the Materials Research Center Northwestern University, 2220 Campus Drive, Evanston, IL 60208 (USA)
    • Department of Materials Science and Engineering and the Materials Research Center Northwestern University, 2220 Campus Drive, Evanston, IL 60208 (USA).
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  • Antonio Facchetti,

    Corresponding author
    1. Department of Chemistry and the Materials Research Center Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA)
    • Department of Chemistry and the Materials Research Center Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA).
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  • Tobin J. Marks

    Corresponding author
    1. Department of Chemistry and the Materials Research Center Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA)
    • Department of Chemistry and the Materials Research Center Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (USA).
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Abstract

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High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large field-effect mobility of 110 cm2V−1s−1, a current on/off ratio of 104, and a low operating voltage of 1.0 V, along with very good optical transparency and mechanical flexibility.

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