High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel
Version of Record online: 20 MAY 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 22, Issue 21, pages 2333–2337, June 4, 2010
How to Cite
Liu, J., Buchholz, D. B., Chang, R. P. H., Facchetti, A. and Marks, T. J. (2010), High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel. Adv. Mater., 22: 2333–2337. doi: 10.1002/adma.200903761
- Issue online: 31 MAY 2010
- Version of Record online: 20 MAY 2010
- Manuscript Revised: 4 DEC 2009
- Manuscript Received: 4 NOV 2009
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