Advanced Materials

High-Performance Organic Field-Effect Transistors from Organic Single-Crystal Microribbons Formed by a Solution Process

Authors

  • Yan Zhou,

    1. The Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education College of Chemistry, Peking University Beijing 100871 (P. R. China)
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  • Ting Lei,

    1. The Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education College of Chemistry, Peking University Beijing 100871 (P. R. China)
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  • Lei Wang,

    1. Institute of Polymer Optoelectronic Materials and Devices South China University of Technology Key Laboratory of Specially Functional Materials of Ministry of Education Guangzhou 510640 (P.R. China)
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  • Jian Pei,

    Corresponding author
    1. The Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education College of Chemistry, Peking University Beijing 100871 (P. R. China)
    • The Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education College of Chemistry, Peking University Beijing 100871 (P. R. China).
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  • Yong Cao,

    1. Institute of Polymer Optoelectronic Materials and Devices South China University of Technology Key Laboratory of Specially Functional Materials of Ministry of Education Guangzhou 510640 (P.R. China)
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  • Jian Wang

    Corresponding author
    1. Institute of Polymer Optoelectronic Materials and Devices South China University of Technology Key Laboratory of Specially Functional Materials of Ministry of Education Guangzhou 510640 (P.R. China)
    • Institute of Polymer Optoelectronic Materials and Devices South China University of Technology Key Laboratory of Specially Functional Materials of Ministry of Education Guangzhou 510640 (P.R. China).
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Abstract

High performance p-channel transistors based on a single-crystal organic microribbon self-assembled through a solution process, are achieved by enhancing the crystallinity, improving the interface between the dielectric and the crystal, shrinking the channel length, and realizing asymmetric metal electrodes for source and drain (see figure). The highest mobility reached is 2.1 cm2 V−1 s−1 with an on/off ratio of 2 × 105 and a threshold voltage of −7 V.

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