Interfaces between transition metal oxide compounds provide a setting where correlated behavior can emerge. Essential to interface studies are substrates that have a single atomic plane termination. By tuning the vapor pressure of La above the surface of La0.18Sr0.82Al0.59Ta0.41O3 (LSAT) during annealing, single-unit-cell steps and predominant A-site (SrO) termination can be achieved.
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