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Achieving A-Site Termination on La0.18Sr0.82Al0.59Ta0.41O3 Substrates

Authors

  • Joseph H. Ngai,

    Corresponding author
    1. Department of Applied Physics, Yale University, P. O. Box 208284, New Haven, CT 06520-8284 (USA)
    2. Department of Chemical Engineering, Yale University, P.O. Box 208260, New Haven, CT 06520-8284 (USA)
    • Department of Applied Physics, Yale University, P. O. Box 208284, New Haven, CT 06520-8284 (USA).
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  • Todd C. Schwendemann,

    1. Center for Research on Interface Structures and Phenomena, Yale University, P.O. Box 208284, New Haven, CT 06520-8284 (USA)
    2. Department of Chemical Engineering, Yale University, P.O. Box 208260, New Haven, CT 06520-8284 (USA)
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  • Anna E. Walker,

    1. Department of Applied Physics, Yale University, P. O. Box 208284, New Haven, CT 06520-8284 (USA)
    2. Center for Research on Interface Structures and Phenomena, Yale University, P.O. Box 208284, New Haven, CT 06520-8284 (USA)
    3. Department of Physics, Covenant College, Look Out Mountain, GA 30750 (USA)
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  • Yaron Segal,

    1. Department of Applied Physics, Yale University, P. O. Box 208284, New Haven, CT 06520-8284 (USA)
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  • Fred J. Walker,

    1. Department of Applied Physics, Yale University, P. O. Box 208284, New Haven, CT 06520-8284 (USA)
    2. Department of Chemical Engineering, Yale University, P.O. Box 208260, New Haven, CT 06520-8284 (USA)
    3. Department of Physics, Covenant College, Look Out Mountain, GA 30750 (USA)
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  • Eric I. Altman,

    1. Center for Research on Interface Structures and Phenomena, Yale University, P.O. Box 208284, New Haven, CT 06520-8284 (USA)
    2. Department of Chemical Engineering, Yale University, P.O. Box 208260, New Haven, CT 06520-8284 (USA)
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  • Charles H. Ahn

    1. Department of Applied Physics, Yale University, P. O. Box 208284, New Haven, CT 06520-8284 (USA)
    2. Department of Chemical Engineering, Yale University, P.O. Box 208260, New Haven, CT 06520-8284 (USA)
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Abstract

Interfaces between transition metal oxide compounds provide a setting where correlated behavior can emerge. Essential to interface studies are substrates that have a single atomic plane termination. By tuning the vapor pressure of La above the surface of La0.18Sr0.82Al0.59Ta0.41O3 (LSAT) during annealing, single-unit-cell steps and predominant A-site (SrO) termination can be achieved.

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