Communication

Retrograde Melting and Internal Liquid Gettering in Silicon

  1. Steve Hudelson1,†,
  2. Bonna K. Newman1,
  3. Sarah Bernardis1,
  4. David P. Fenning1,
  5. Mariana I. Bertoni1,
  6. Matthew A. Marcus2,
  7. Sirine C. Fakra2,
  8. Barry Lai3,
  9. Tonio Buonassisi1,*

Article first published online: 29 JUL 2010

DOI: 10.1002/adma.200904344

Issue

Advanced Materials

Advanced Materials

Volume 22, Issue 35, pages 3948–3953, September 15, 2010

Additional Information

How to Cite

Hudelson, S., Newman, B. K., Bernardis, S., Fenning, D. P., Bertoni, M. I., Marcus, M. A., Fakra, S. C., Lai, B. and Buonassisi, T. (2010), Retrograde Melting and Internal Liquid Gettering in Silicon. Adv. Mater., 22: 3948–3953. doi: 10.1002/adma.200904344

Author Information

  1. 1

    Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139 (USA)

  2. 2

    Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, 94720 (USA)

  3. 3

    Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois, 60439 (USA)

  1. †

    1366 Technologies, Lexington, MA 02421, USA

*Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139 (USA).

Publication History

  1. Issue published online: 10 SEP 2010
  2. Article first published online: 29 JUL 2010
  3. Manuscript Received: 18 DEC 2009

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

View Full Article with Supporting Information (HTML) Get PDF (802K)

Keywords:

  • Silicon;
  • retrograde melting;
  • synchrotron microprobe
Thumbnail image of graphical abstract

Retrograde melting (melting upon cooling) is observed in silicon doped with 3d transition metals, via synchrotron-based temperature-dependent X-ray microprobe measurements. Liquid metal-silicon droplets formed via retrograde melting act as efficient sinks for metal impurities dissolved within the silicon matrix. Cooling results in decomposition of the homogeneous liquid phase into solid multiple-metal alloy precipitates. These phenomena represent a novel pathway for engineering impurities in semiconductor-based systems.

View Full Article with Supporting Information (HTML) Get PDF (802K)