Communication

Direct Laser Writing of Nanoscale Light-Emitting Diodes

  1. Oleg Makarovsky1,*,
  2. Santosh Kumar2,
  3. Armando Rastelli2,
  4. Amalia Patanè1,
  5. Laurence Eaves1,
  6. Alexander G. Balanov3,
  7. Oliver G. Schmidt2,
  8. Richard Campion1,
  9. Charles T. Foxon1

Article first published online: 9 JUN 2010

DOI: 10.1002/adma.200904409

Issue

Advanced Materials

Advanced Materials

Volume 22, Issue 29, pages 3176–3180, August 3, 2010

Additional Information

How to Cite

Makarovsky, O., Kumar, S., Rastelli, A., Patanè, A., Eaves, L., Balanov, A. G., Schmidt, O. G., Campion, R. and Foxon, C. T. (2010), Direct Laser Writing of Nanoscale Light-Emitting Diodes. Advanced Materials, 22: 3176–3180. doi: 10.1002/adma.200904409

Author Information

  1. 1

    School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

  2. 2

    Institute for Integrative Nanosciences, IFW Dresden, D-01069 Dresden (Germany)

  3. 3

    Department of Physics, Loughborough University, Loughborough LE11 3TU (United Kingdom)

*School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom).

Publication History

  1. Issue published online: 3 AUG 2010
  2. Article first published online: 9 JUN 2010
  3. Manuscript Received: 23 DEC 2009

Funded by

  • EPSRC, the Royal Society and DFG. Grant Number: FOR730

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Keywords:

  • direct laser writing;
  • light-emitting diodes;
  • nanoLEDs;
  • semiconductors

Graphical Abstract

Thumbnail image of graphical abstract

Nanoscale light-emitting diodes (nanoLEDs) and arrays of nanoLEDs produced by laser controlled diffusion of interstitial manganese (Mni) donor ions out of the ferromagnetic semiconductor (GaMn)As towards the underlying layers of a quantum well heterostructure. The approach represents an alternative to deep etching for the creation of nanoscale current channels and nanoLEDs.

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