High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Authors

  • Lei Liao,

    1. Department of Chemistry and Biochemistry University of California Los Angeles, CA 90095 (USA)
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  • Jingwei Bai,

    1. Department of Materials Science and Engineering University of California Los Angeles, CA 90095 (USA)
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  • Yung-Chen Lin,

    1. Department of Materials Science and Engineering University of California Los Angeles, CA 90095 (USA)
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  • Yongquan Qu,

    1. Department of Chemistry and Biochemistry University of California Los Angeles, CA 90095 (USA)
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  • Yu Huang,

    Corresponding author
    1. Department of Materials Science and Engineering University of California Los Angeles, CA 90095 (USA)
    2. California NanoSystems Institute University of California Los Angeles, CA 90095 (USA)
    • Department of Materials Science and Engineering University of California Los Angeles, CA 90095 (USA).
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  • Xiangfeng Duan

    Corresponding author
    1. Department of Chemistry and Biochemistry University of California Los Angeles, CA 90095 (USA)
    2. California NanoSystems Institute University of California Los Angeles, CA 90095 (USA)
    • Department of Chemistry and Biochemistry University of California Los Angeles, CA 90095 (USA).
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Abstract

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A new strategy for integrating high-dielectric-constant (high-k) dielectrics with graphene nanoribbon (GNR) is presented. Freestanding zirconium oxide nanowires are synthesized and subsequently assembled on top of GNRs as high-k gate dielectrics for top-gated GNR transistors with unprecedented performance.

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